parameter symbol condition ratings optical output power p f 50 cw mw laser forward current i f 250 cw ma photodiode reverse voltage v dr 20 v - photodiode forward current i pf 10 ma - cooler voltage v c 5.0 v note (1) lead soldering time t sold 10 sec <260 c laser reverse voltage v r 2 -v unit absolute maximum ratings (t c =25 c) - cooler current i c 2.0 a - storage temperature t stg -40 to +85 c - operating case temperature t op 0 to +70 c features: ?wavelength locker, integrated cw light source ?tunable range : 2.4nm or more with 2 channel itu-t grid selectable (with 100ghz spacing) ?wavelengths available to itu-t standard 100ghz spacing 52 (=13 x 4) channels (c-band : 1528.77 - 1569.59nm) ?operating temperature range : 0 - 70? ?fiber output power : 13dbm typical ?ld driving current : 80ma typical, less than 200ma ?built-in optical isolator ?polarization preserving (panda) fiber ?monitor current : more than 35 a (for apc) greater than 25 a (for wavelength monitor) ?wavelength stability : less than +/-40pm drift during 20years operation and case temperature change (0 - 70?) ?comes in standard 14-pin butterfly package applications: long haul dwdm applications at all bit rates metropolitan dwdm applications at 10 gbs description: the fujitsu tunable ld module with wavelength locker (fld5f6ca-c) is a high power cw laser (13dbm) with polarization maintaining fiber that is intended for use with an external mod- ulator. the laser can be wavelength tuned across a 2.4nm range (4 itu-t 100ghz spaced channels) via adjustment of the chip temperature with the included tec. the tuned wave- length can then be locked onto the desired itu-t grid channel via use of the included fabry- perot etalon. this laser is available at any of the 52 itu-t wavelengths in the c band (1528.77-1569.59nm). the device comes in a standard 14 pin butterfly package, operates between 0-70?, and requires 80ma of drive current (typical). 1 edition 1.0 february 2001 tunable ld module with wavelength locker fld5f6ca-c
2 tunable ld module with wavelength locker fld5f6ca-c parameter symbol laser set temperature t set relative intensity noise rin conditions - cw, pf=20mw, orl>40db, f=dc-7.5ghz t l =tset, tc=+70 c, pf=20mw t l = tset, tc=+70 c, pf=20mw tc, t l =+25 c tc, t l =+25 c unit c min. 11 limits db/hz -140 - peak wavelength p note (3) nm +35 - optical output power p f cw, tc=-20 to +65 c mw - 20 - slope efficiency cw, pf=10mw, orl>40db ch. 1-ch.2, orl>40db cw, pf=20mw, orl>40db cw, pf=20mw, orl>40db mw/ma tracking error (note 2) te im=constant, pf(tc=25 c)=20mw, tc=0 to +70 c db +1.0 -0.5 - monitor current i m monitor dark current monitor capacitance idm c t pf=20mw v pd =5v v pd =5v, f=1 mhz ma na pf .35 100 10 0.035 - - - - - wavelength stability with case temperature - im1=constant, im2=constant, tc=0-70 c, 20 years pm 40 -40 - side mode suppression sr db - 33 - spectral width (-3db) ? mhz 10 -3 - cooler current ic a 1.4 -- cooler voltage vc v 4.5 -- thermistor resistance rth k ? 10.5 9.5 10.0 thermistor b constant (note 2) bk 3,630 3,270 3,450 optical isolation i s tc=0 to +70 cdb - 22 - extinction ratio te/tm cw, pf=20mw db - 20 - threshold current i th cw ma 345 - forward voltage v f cw, i f =30 ma, pin 3,13 v - - 2.5 - 0.2 - max. typ. note 1. te=10*log[pf(tc)/pf(25)] note 2. relation between resistance and temperature ( k) is: rth (t) = rth (25)*exp[b(1/t-1/298)] note 3. reference figure 5 wavelength table optical and electrical characteristics at (t l =t set , t c =25 c, bol, unless otherwise specified)
fig. 5 wavelength table part number fld5f6ca-c9610 1528.773 1529.553 0.01 0.01 fld5f6ca-c9470 1539.766 1540.557 0.01 0.01 fld5f6ca-c9490 1538.186 1538.976 0.01 0.01 fld5f6ca-c9510 1536.609 1537.397 0.01 0.01 fld5f6ca-c9530 1535.036 1535.822 0.01 0.01 fld5f6ca-c9550 1533.465 1534.250 0.01 0.01 fld5f6ca-c9570 1531.898 1532.681 0.01 0.01 fld5f6ca-c9590 1530.334 1531.116 0.01 0.01 fld5f6ca-c9450 1541.349 1542.142 0.01 0.01 FLD5F6CA-C9430 1542.936 1543.730 0.01 0.01 fld5f6ca-c9410 1544.526 1545.322 0.01 0.01 fld5f6ca-c9390 1546.119 1546.917 0.01 0.01 fld5f6ca-c9370 1547.715 1548.515 0.01 0.01 wavelength (nm) (tl=tset) (in vacuum) tolerance (nm) part number fld5f6ca-c9350 1549.315 1550.116 0.01 0.01 fld5f6ca-c9210 1560.606 1561.419 0.01 0.01 fld5f6ca-c9230 1558.983 1559.794 0.01 0.01 fld5f6ca-c9250 1557.363 1558.173 0.01 0.01 fld5f6ca-c9270 1555.747 1556.555 0.01 0.01 fld5f6ca-c9290 1554.134 1554.940 0.01 0.01 fld5f6ca-c9310 1552.524 1553.329 0.01 0.01 fld5f6ca-c9330 1550.918 1551.721 0.01 0.01 fld5f6ca-c9190 1562.223 1563.047 0.01 0.01 fld5f6ca-c9170 1563.863 1564.679 0.01 0.01 fld5f6ca-c9150 1565.496 1566.314 0.01 0.01 fld5f6ca-c9130 1567.133 1567.952 0.01 0.01 fld5f6ca-c9110 1568.773 1569.594 0.01 0.01 wavelength (nm) (tl=tset) (in vacuum) tolerance (nm) 3 tunable ld module with wavelength locker fld5f6ca-c fig.4 spectrum wavelength (nm) relative intensity (db) 0 -10 -40 -50 -60 -20 -30 10 1545 1550 1555 fig. 2 temperature dependance of wavelength laser temperature, t l ( c) wavelength (nm) 1550 1551 1552 1553 1554 10 20 30 40 fig. 1 forward current vs output power forward current, if (ma) output power, pf (mw) 9 6 3 0 12 060 30 90 fig. 3 cooler voltage -current case temperature ( c) cooler voltage (v) cooler current (a) -1.0 3.0 2.0 0.0 1.0 -1.0 3.0 2.0 0.0 1.0 02030 10 40 50 60 ic vc 70 80
tec pd2 pd1 rth 765 432 1 8 9 10 11 12 13 14 1500min. fc-pc or fc-angled facet connector 23 0.7 29.97 0.25 8.17 0.2 17.24 0.25 15.24 0.25 2.54 0.25 5.4 0.5 pin 1 4-?.67 0.2 5.47 0.15 4.15 0.25 0.7 0.15 pin 7 pin 8 pin 14 14-0.5 0.1 5.41 0.25 14-0.1 0.05 26.04 0.25 20.83 0.25 22.0 0.25 15.2 0.3 12.7 0.15 5.08 0.15 8.25 0.5 ?.9 0.1 5.08 0.15 (?0) ?.2 0.3 8.89 0.15 top view # pin designations 1 temperature monitor 2 temperature monitor 3 laser cathode 4 power monitor (anode) 5 power monitor (cathode) 6 tehp (+) 7 tehp (-) 8 pd2(wave length monitor) cathode 9 pd2(wave length monitor) anode 10 nc 11 ground 12 laser cathode 13 ld anode, ground 14 nc (32) 8.25 0.5 4 ?a?package tunable ld module with wavelength locker fld5f6ca-c fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: fujitsu compound semiconductor, inc. americas & r.o.w. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fme, qdd fujitsu microelectronics europe gmbh quantum devices division network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 fujitsu quantum devices singapore pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-23770226 fax: +852-23763269 fujitsu quantum devices limited global business division global sales support department shinjuku daiichiseimei building, 2-7-1 nishishinjuku, shinjuku-ku, tokyo, 163-0721, japan tel: +81-3-5322-3356 fax: +81-3-5322-3398 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any li cense under rights of fujitsu limited or others. 2001 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0101m200
|
